Boron-hydrogen complex bond vibration

The most commonly accepted model for the hydrogen-acceptor pairs locates H at the BC site (see Fig. 4). This model was originally proposed for the H—B complex on the basis of satisfied bonds to explain the increased resistivity (Pankove et al., 1983), SIMS profiles (Johnson, 1985), and a hydrogen local-mode frequency consistent with a perturbed hydrogen-silicon bond (Pankove et al., 1985 Johnson, 1985 Du et al., 1985). The acceptor deactivation by atomic hydrogen was subsequently observed for Al, Ga, and In acceptors in silicon (Pankove et al., 1984). Hydrogen local-mode vibrations were identified as well for the H—Al and H—Ga complexes (Stavola et al., 1987). The boron vibrational frequency for the H—B pair was first identified by Stutzmann (1987) and Herrero and Stutzmann (1988a). 

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