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Bonding nanostructure growth mechanisms

Fig. 2. STM images of molecular nanostructures of styrene on H-terminated silicon surfaces resulting from reaction at single dangling bonds via the radical chain mechanism depicted in Fig. 1. This process leads to the growth of molecular lines on H/Si(100) and irregularly shaped islands on H/Si(lll). Fig. 2. STM images of molecular nanostructures of styrene on H-terminated silicon surfaces resulting from reaction at single dangling bonds via the radical chain mechanism depicted in Fig. 1. This process leads to the growth of molecular lines on H/Si(100) and irregularly shaped islands on H/Si(lll).

See other pages where Bonding nanostructure growth mechanisms is mentioned: [Pg.291]    [Pg.37]    [Pg.134]    [Pg.114]    [Pg.2399]    [Pg.130]    [Pg.478]    [Pg.280]    [Pg.531]    [Pg.401]    [Pg.113]    [Pg.84]    [Pg.138]    [Pg.119]   
See also in sourсe #XX -- [ Pg.42 , Pg.309 , Pg.311 ]




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