Bias-enhanced nucleation

Table 1. Deposition Parameters Used in In Situ Carburization, Bias-enhanced Nucleation and Growth ProcKsesl ...

B. R. Stoner, S. R. Sahaida, J. P. Bade, P. Southworth, and P. J. Ellis, Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growth, J. Mater. Res., 8(6) 1334-1340 (1993)... 

Si wafers (that have undergone a bias enhanced nucleation (BEN) pre-treatment step), Mo, W, and WC-6wt,% Co (that have undergone a manual pre-treatment step ) were used as the substrates. Other deposition related details have been discussed in the listed references. ... 

Tsai SH, Chao CW, Lee CL, Shih HC. Bias-enhanced nucleation and growth of the aligned carbon nanotubes with open ends under microwave plasma synthesis. Appl Phys Lett 1999 74 3462. ... 

Gerber J, Robertson J, Sattel S, Ehrhardt H. Role of surface diffusion processes during bias-enhanced nucleation of diamond on Si. Diamond Relat Mater 1996 5 261-5. 

Etching of nondiamond phases and to a lesser extent of diamond as well by atomic hydrogen prevents nucleation of diamond on heterosubstrates under normal growth conditions. Nucleation requires that carbon clusters are protected from H until they have reached a critical size. That is achieved on Si by the so-called bias enhanced nucleation (BEN) [50]. In BEN, a bias of about 200 V is applied between the plasma and the substrate. Thereby C+ ions are extracted from the plasma and are shallowly implanted into a thin ( 10 nm) layer of SiC that forms on Si during the initial growth phase. Protected from H attack by SiC, they grow into... 

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