Barium defect structures

The difference in catalytic activity between the La- and the Ba-based hexa-aluminates results from the following reasons the first difference is the valence of cation in the mirror pleuie between tri-valent lanthanum ion and di-valent barium ion. The second is the crystal structure between magnetoplumbite and P-alumina, which are different in the coordination of ions and concentration of Frenkel-type defect in mirror plane. The redox cycle of transition metal in hexa-aluminate lattice, which closely related with catalytic activity, is affected sensitively with these two factors. 

For jumps involving single point defects, is accurately known for the different crystal structures. Ionic conductivity measurements, coupled with other diffusion measurements, have proved to represent a very powerful method for identifying diffusion mechanisms. However, the requirement for single-crystal samples proved to be very restrictive in terms of the materials that could be investigated, and the approach has been used successfully only for very simple systems. Examples include the combination of conductivity and diffusion in the study of alkali and silver halides [226], and the combination of conductivity and NMR in the study of barium fluoride [219]. 

The compound I YCujOy shows an even higher superconducting transition ( 93 K) and crystallizes as a defect perovskite. The structure of I YCh Oy has been determined by neutron diffraction analysis. oThe space group is Pmmm with a = 3.8198, b = 3.8849 and c = 11.6762 A. Barium and yttrium are ordered on the A site to give a tripled cell along c and the oxygens occupy 7/9 of the anion sites. One third of the copper is in 4-fold coordination and 2/3 are five-fold coordinated (Gallagher, P.K. O Bryan, H.M. Sunshine,... 

In order to establish the model of intergranular impedance for doped barium titanate, it is important to notice that miorostructure properties of BaTiOj based materials, expressed in their grain boundary contacts, are of basic importance for electric properties of these materials. The barrier character of the grain boundaries is especially pronounced for doped BaTiOs materials which are used as PTC resistors. Basically two types of dopants can be introduced into BaTiOs large ions of valence 3+ and higher, can be incorporated into Ba positions, while the small ions of valence 5+ and higher, can be incorporated into the Ti sublattice [9-11], Usually, the extent of the solid solution of a dopant ion in a host structure depends on the site where the dopant ion is incorporated into the host structure, the compensation mechanism and the solid solubility limit [12], For the rare-earth-ion incorporation into the BaTiOs lattice, the BaTiOs defect chemistry mainly depends on the lattice site where the ion is incorporated [13], It has been shown that the three-valent ions incorporated at the Ba -sites act as donors, which extra donor charge is compensated by ionized Ti vacancies (V -), the three-valent ions... 

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