Bandgap pressure coefficients

Van Camp et al [13] also calculated the first and second pressure derivatives by the ab-initio norm-conserving non-local pseudopotential method of the energy differences between the T X-, and L-states of the valence and lowest conduction band and the top of the valence band in ri5 for 3C-SiC. The first-order pressure coefficients for the direct (ri5v-ric) and indirect (T15v - Xu) bandgaps are 61.7 meV GPa 1 and -1.1 meV GPa 1, respectively. The signs of these values are the same for all semiconductors by Paul s rule. However, the magnitudes are quite different from those of other semiconductors. 

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