Atomic adsorption on compound semiconductors

Complete structure determinations for Al, Bi and Sb adsorption on GaAs(110) have been performed. Al adsorption on GaAs(llO) leads to the substitution of Al atoms for Ga atoms in one or more layers (depending upon the coverage). This atomic exchange occurs because the As-Al bond energy is larger 

Structural parameters for atomic adsorption on the (110) and (1010) surfaces of zincblende and wurtzile structure compound semiconductors. The bond length is that of the anion-cation dimer in the first layer. D is the tilt angle in the top layer. The other parameters arc defined by fig. 16. 

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