Arsenic, elemental boron halides

Ion implantation [15] forces ions of dopant into the silicon using a stream of high energy ions produced in a machine similar to a mass spectrophotometer. Sources of dopants for this process are elemental arsenic and phosphorus, arsine, phosphine, diborane, and some boron halides. A more detailed description of doping procedures is beyond the scope of this text and can be found elsewhere [8]. 

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