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Array attributes built

Hie Hiales group has patented an original sensor architecture based on an array of CNTFETs with various metals for the electrodes (BondavaUi et al., 2008, 2010). As described in Section 10.3.3, the sensing mechanism of CNTFETs is mainly attributed to the modulation of the Schottky barrier built at the contacts between metallic electrodes and semiconducting SWCNTs. Assuming that the adsorption of gas at the contacts depends on its chemical affinity with the electrodes, each gas-metal couple should induce different modulation of the Schottky barrier. [Pg.375]


See other pages where Array attributes built is mentioned: [Pg.139]    [Pg.100]    [Pg.99]    [Pg.507]    [Pg.1343]    [Pg.3]    [Pg.191]    [Pg.32]   
See also in sourсe #XX -- [ Pg.191 ]




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