Argon etching

X-ray photoelectron spectroscopic(XPS) analysis with argon-etching gives surface and depth profile of catalyst composition[20]. Figure 2 shows enriched Te-content at surface of Te/Mo=... 

Destructive depth profile using argon etching (for inorganics)... 

Figure 3.7 SEM of a microtomed argon etched surface of MXD6 nanocomposite showing the montmorilionite plates sticking up from the surface.

Finally, the metallisation layer usually requires patterning, which can be done by reactive ion etching (RIE) or back-sputtering. The two processes are similar. In both techniques accelerated ions hit the substrate and forcibly detach atoms or molecules from the surface. RIE uses reactive gases such as chlorine, Cl or trichlorofluoromethane [75-69-4] CCl E. Inert gases such as argon or neon are used in back-sputtering. 

HfCl2[N(SiMe3)2]2 was synthesized with the reaction of anhydrous HflCU and Na[N(SiMe3)] in toluene [5]. The films were grown in a cold-wall flow-type ALD reactor on (100) oriented p-Si substrates in the temperature range of 150-400 °C. Prior to deposition. Si substrate was etched in dilute HF solution to remove the native oxide and then rinsed in deionized water. The pressure in the reactor was fixed at about 0.5 torr. Argon (99.99995%) was used as a... 

Ion-Assisted Processes An alternative use of ion beams generated from low cost sources is to assist particular chemical reactions, or vapour deposition. An example here is in etching processes (Figure 16). The simultaneous use of an argon beam with XeFp gas compared with the use of either separately, to etch silicon produces an etch rate of a factor of at least fourteen. The use of ion beams can also increase the directionality (23) of the process (Figure 17). Examples are given in Table IV of how ion bombardment during film formation modifies the final film. 

Fig. 2. Cross-section scanning electron micrographs of a-Si H deposited on etched crystalline silicon substrates under (a) CVD conditions, 2W, 300°C, 100% SiH4 and (b) PVD conditions, 25W, 300°C, 5% SiH4 in argon (Tsai et al., 1986).

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