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Antimony self-diffusivity

Point Defect Generation During Phosphorus Diffusion. At Concentrations above the Solid Solubility Limit. The mechanism for the diffusion of phosphorus in silicon is still a subject of interest. Hu et al. (46) reviewed the models of phosphorus diffusion in silicon and proposed a dual va-cancy-interstitialcy mechanism. This mechanism was previously applied by Hu (38) to explain oxidation-enhanced diffusion. Harris and Antoniadis (47) studied silicon self-interstitial supersaturation during phosphorus diffusion and observed an enhanced diffusion of the arsenic buried layer under the phosphorus diffusion layer and a retarded diffusion of the antimony buried layer. From these results they concluded that during the diffusion of predeposited phosphorus, the concentration of silicon self-interstitials was enhanced and the vacancy concentration was reduced. They ruled out the possibility that the increase in the concentration of silicon self-interstitials was due to the oxidation of silicon, which was concurrent with the phosphorus predeposition process. [Pg.300]


See other pages where Antimony self-diffusivity is mentioned: [Pg.289]    [Pg.577]    [Pg.305]    [Pg.577]    [Pg.683]    [Pg.562]    [Pg.221]    [Pg.598]    [Pg.626]   
See also in sourсe #XX -- [ Pg.346 ]




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