Antimony self-diffusivity

Point Defect Generation During Phosphorus Diffusion. At Concentrations above the Solid Solubility Limit. The mechanism for the diffusion of phosphorus in silicon is still a subject of interest. Hu et al. (46) reviewed the models of phosphorus diffusion in silicon and proposed a dual va-cancy-interstitialcy mechanism. This mechanism was previously applied by Hu (38) to explain oxidation-enhanced diffusion. Harris and Antoniadis (47) studied silicon self-interstitial supersaturation during phosphorus diffusion and observed an enhanced diffusion of the arsenic buried layer under the phosphorus diffusion layer and a retarded diffusion of the antimony buried layer. From these results they concluded that during the diffusion of predeposited phosphorus, the concentration of silicon self-interstitials was enhanced and the vacancy concentration was reduced. They ruled out the possibility that the increase in the concentration of silicon self-interstitials was due to the oxidation of silicon, which was concurrent with the phosphorus predeposition process. 

---