Anti-phase domain boundaries

Figure 3 High resolution electron micrograph for Cu-Au LXq ordered phase [29]. Black and white dots indicate different species and black stripes are Anti Phase Domain boundaries. The lattice mismatch across the domain boundary is clearly observed by referring to the guide lines in white.

Anti-phase domain boundaries, are three-dimensional mistakes typical of several intermetallic systems undergoing disorder/order transformations. APBs also act on the apparent domain size, but selection rules are totally different... 

Terms included in Equation (26) are the IP, which can be expressed by the FT of a pseudo-Voigt function (Tp ) obtained from a suitable line profile standard (Section 13.2.3), contributions from size ( / ), dislocations ( / )> faulting (Ahk + anti-phase domain boundaries (Aff f). Expressions for various... 

Anti-Phase Domain Boundaries Burgers vector... 

Fig. 79. The stmcture of the Si(100)2xl-Sb surface, (a) 50x50 empty state STM image of the Si(100)2xl-Sb surface formed by annealing of 0.6 ML Sb at 820 K. The surface comprises the array of the Sb dimer rows. The brighter areas are Sb dimers of the second Sb layer. The surface is characterized by a high density of defects, voids (seen as dark regions) and anti-phase domain boundaries, (b) The registry of the Sb dimers observed by STM relative to the clean Si(100)2xl surface. The Sb dimers are aligned perpendicular to the Si dimers and form rows that run parallel to the Si dimer direction [90R4]. Similar stmcture is formed in Te/Si(100) system.

It should be pointed out that Pd Ge is difficult to disorder because of the ease of the ordering. The disordered sample was prepared by quenching (see below) and it showed no superlattice lines in the electron diffraction pattern nor any anti-phase domain boundaries in the TEM photomicrographs o... 

In the three-step process, the thickness of the SiC layer was monitored as a function of time in the carburization and BEN steps, and its thickness reached a maximum at 3-5 min of the BEN treatment [267]. A mesh structure was also observed. The hillock (protrusion) structure was extended along [110] or [110], and hence the boundaries between the hillock structures were considered to be anti-phase boundaries between the anti-phase domains of 3-SiC. 

Anti-phase boundaries are interfaces leading a phase shift in the scattering amplitudes between two domains. They may be distinguished from those where the two domains differ in orientation. 

Fig. 37. (a) Translation domains in the B structure, in a plane parallel to (20T) 1, 2,3 are the different kinds of R atoms. Juxtaposition of two R atoms of the same kind is possible. Three translation domains and two anti-phase boundaries can occur in each crystal, (b) The two kinds of anti-phase boundaries they can be indexed s(132] and 3(132] which is equivalent to —1(132]. The same boundary between two regions is indexed in a different way in each region. 

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