Annihilation rate from oxygen

Fig. 3 displays the changes in the introduction rate of the vacancy-oxygen complex with the irradiation temperature. The introduction rates of the VO and C -Oi centers increase about twice upon raising the irradiation temperature from 350 to 685 K. An analysis of all the available results on the effect of irradiation temperature on introduction rates of radiation induced centers allows us to suggest that the observed increase of t] in the range of 350-685 K can be associated with suppression of the annihilation rate of Frenkel pairs with the temperature increase. 

Second, the energy of emission activation is close to the energy of activation of adsorption of oxygen by silver - 146 kj/mol [49]. This implies that emission of O-atoms occurs due to energy of defect annihilation in the surface-adjacent layers of catalyst due to adsorption of oxygen. From the stand-point of such assumption it is obvious that depletion of emission is linked with sloroing down of the oxygen absorption rate (as shown, for instance, in Fig. 6.12). 

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