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Anisotropic growth, silicon nitrides

P. F. Becher, G. S. Painter, N. Shibata, R. L. Satet, M. J. Hoffmann, S. J. Pennycook, Influence of additives on anisotropic grain growth in silicon nitride ceramics. Mater. Sci. Eng. A -Struct. Mater. Prop. Microstr. Process., 422, 85-91 (2006). [Pg.38]

Figure 9.24 Exploitation of controlled anisotropic abnormal grain growth (a) Self-reinforced silicon nitride, showing the interaction of a propagating crack with the micro-structure (magnification 2000 X ). (Courtesy of M. J. Hoffmann.) (b) Bismuth titanate with a microshucture of aligned anisotropic grains, giving anisottopic dielectric properties, (magnification 1000 X ). Figure 9.24 Exploitation of controlled anisotropic abnormal grain growth (a) Self-reinforced silicon nitride, showing the interaction of a propagating crack with the micro-structure (magnification 2000 X ). (Courtesy of M. J. Hoffmann.) (b) Bismuth titanate with a microshucture of aligned anisotropic grains, giving anisottopic dielectric properties, (magnification 1000 X ).
See other pages where Anisotropic growth, silicon nitrides is mentioned: [Pg.39]    [Pg.204]    [Pg.198]    [Pg.353]    [Pg.692]    [Pg.338]    [Pg.765]   
See also in sourсe #XX -- [ Pg.763 ]



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