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Carrier concentration AlGaN

AlGaN alloys doped with Si have been grown by electron cyclotron resonance (ECR) MBE at temperatures between 700 and 800°C [23,24], These layers were found to have net carrier concentrations of 1016 to 1019 cm 3 as measured by the Hall effect technique. The carrier concentration varies only slightly on alloying up to 25% Al. The samples were found to be smooth and free from cracks. Murakami et al also reported crack-free surfaces of Si doped Alo.1Gao.9N with a carrier concentration of up to 2 x 1018 cm 3 [25],... [Pg.353]

See other pages where Carrier concentration AlGaN is mentioned: [Pg.353]    [Pg.353]    [Pg.542]    [Pg.542]    [Pg.160]    [Pg.169]    [Pg.3]    [Pg.736]    [Pg.736]    [Pg.599]   
See also in sourсe #XX -- [ Pg.147 , Pg.151 ]



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Carrier concentration

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