Adsorption, desorption and binding of H to Si

Having adsorbed H2, one may then consider H desorption. A number of groups have studied this process by a variety of techniques. They generally find that the 

For a substrate surface heated at -2°C per second, most of the dihydride surface will desorb H2 and convert to a monohydride surface at -400°C, while the monohydride will desorb H2 and yield a clean surface at -520°C. Slower heating or a static anneal will allow to desorption at lower temperatures if sufficient time is available. Hydrogen-terminated Si (100) surfaces can also be created Ifom normal air-exposed oxidized surfaces by dipping the wafer in HF. The strength of the Si-H bond is illustrated by the observation that this surface is stable in laboratory air under standard conditions for several minutes to several hours. 

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