GaAlInPAs


Information courtesy of Flavor Knowledge Systems, Glenview, Illinois. FEMA and FDA Hstiugs.  [c.13]

A1 and GaAs shallow homojunctions. Each type is being developed in order to minimise the effects of the recombination of charge carriers at the site of broken bonds in the top surface. Such recombination effects, which are more severe in GaAs than in silicon because of the shallower absorption depth of sunlight in GaAs, can severely reduce the photocurrent and therefore the conversion efficiency. Reported efficiencies of GaAs cells are ca 27.5% at AM 1.5 with a sunlight concentration of 205 and cell temperatures of 25°C (3). Silicon cells have achieved conversion efficiencies of 26.5% at AM 1.5 with a 140-fold concentration of sunlight and cell temperatures of ca 25°C. Sophisticated multijunction solar cells such as GaAs—GaSb and GalnP—GaAs, with expected practical limits of about 40%, have exceeded 30% efficiency in laboratory configurations (13).  [c.471]

Lial, M. L., and Miller, C. D., Essential Calculus with Applications, 2nd Edition, Scott, Eoresman and Company, Glenview, 1980.  [c.133]

There is a wealth of research that has been done on shift transformations. One of the best references is Golomb s classic Shift Register Sequences [golom67].  [c.237]


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Encyclopedia of materials characterization (1992) -- [ c.393 ]